The report “Silicon Carbide (SiC) Semiconductor Materials and Devices (Discretes & Chips) Market, Global Forecasts & Analysis (2012-2022)” defines and segments the global SiC Semiconductor market with analysis and forecasting of the revenues and volumes for the overall market and all its sub-segments.

Dallas, TX -- (ReleaseWire) -- 03/11/2014 --The SiC opto-semiconductors market and high temperature semiconductor markets are currently niche segments, but expected to grow at healthy CAGRs. Important players who are among the top 10 in the overall SiC semiconductor market, as they have also deeply established bases in the SiC opto & high temperature semiconductor market segments. The SiC high-temperature semiconductors market is expected to have an excellent growth, but not as fast as power semiconductors, primary reason being that it is a niche area, with lesser focus on industry players and fewer number of industry players. The other reasons are cost concerns, relatively lesser demand, narrow application areas, and so on. The SiC high-temperature semiconductors market is expected to grow at a CAGR of 21.87% from 2012 to 2022, crossing $350 million by 2022.

This research study on the SiC semiconductors market and industry gives a detailed overview of the global SiC semiconductor devices market in the present scenario, and discusses the history, evolution, market by technology (polymer types and substrate & epitaxy materials), market by products and devices, market by application segments and by geography. Each classification done for the global SiC semiconductor devices market has extensive segmentation with market estimates and forecasts till 2022 for each sub-market in terms of both revenues and volumes. The major SiC semiconductor products – namely, the power semiconductors, opto semiconductors and high temperature semiconductors are analyzed in great detail throughout the research study in every type of classification.

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Over the past few years, several research & developments activities took place to develop SiC-based discretes and ICs that have advanced and sophisticated characteristics and offer better flexibility for use in several power and high-temperature applications. The SiC semiconductor devices market is expected to grow robustly at a high CAGR of 37.67% from 2012 to 2022. The SiC market’s competitive landscape had only a handful of players in the beginning of the previous decade, but it quickly emerged into a vast network with more than forty key players combining both materials & devices. Currently, the overall SiC power semiconductors market accounts for less than 1% of the total power semiconductors market, but over the next ten years, the entire base of power semiconductors & electronics players is expected to penetrate this new value chain, thereby rapidly increasing the percentage share. The global SiC semiconductor devices’ market revenue stood is estimated to be roughly $218 million in 2012 and forecasted to reach $5.34 billion by end of 2022.

Silicon Carbide is an upcoming alternate material to pure silicon in the field of semiconductors & electronics. For many decades in the latter half of the twentieth century, silicon carbide was used in various other sectors, in several applications where advanced features of silicon carbide useful for semiconductors such as inherent radiation-resistance, high-temperature operating capacity, high voltage and power handling capacity, flexibility to be used a substrate, were discovered. Since then, extensive research studies took place to utilize silicon carbide for semiconductor devices and electronic systems. The first commercial use of SiC in semiconductor devices started at the turn of the century. Since then, SiC has penetrated into three major sub-segments of the semiconductor industry; namely the power semiconductors industry, the opto-semiconductor industry, and the high-temperature semiconductor industry.

The penetration of silicon carbide was the first in high-temperature semiconductors, followed by power semiconductors and opto-semiconductors. While the penetration growth rate is healthy and substantial in high temperature, the penetration rate in power semiconductors is explosive. One of the prime reasons for this is the growing application areas in the high-voltage (>1 kV) ranges, where SiC offers unique unbeatable efficiency over pure silicon. In the power semiconductors, several transistors and diodes came into the market since 2003, with enormous growth in the volume of power discretes (MOSFETs, IGBTs, Diodes & Rectifiers, Thyristors and other transistors) boosting the total revenue of the SiC power semiconductors market.

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