Fully depleted silicon-on-insulator (FD-SOI) is a planar process technology that provides an ideal platform for the development of planner transistor architecture on a SOI substrate. FD-SOI helps in delivering low power, improved performance, and reduced silicon geometries. The FD-SOI technology is based on two innovations: an ultra-thin insulator layer known as buried oxide, which is placed at the top of the silicon base, and a thin layer of silicon, which is used for creating a transistor channel. Owing to this thin layer, the doping of the channel is removed. This means that the impurity atoms that lie in the semiconductor are completely removed, making it fully depleted. The combination of these two innovations is called the ultra-thin body and buried oxide (UTBB)-FD-SOI technology. The FD-SOI structure has evolved from the bulk CMOS process. The FD-SOI technology helps in providing a balance between cost, digital performance, power consumption, and mixed-signal compatibility.